SH8K1TB1
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SH8K1TB1 datasheet
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МаркировкаSH8K1TB1
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ПроизводительRohm
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ОписаниеRohm SH8K1TB1 Continuous Drain Current: 5 A Current - Continuous Drain (id) @ 25?° C: 5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: 2 N-Channel (Dual) Forward Transconductance Gfs (max / Min): 3 S Gate Charge (qg) @ Vgs: 5.5nC @ 5V Input Capacitance (ciss) @ Vds: 230pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 58 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: SH8K1TB1TR
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Количество страниц4 шт.
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Форматы файлаHTML, PDF
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10.06.2024
09.06.2024
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